VERTICALLY-ORIENTED COMPLEMENTARY TRANSISTOR

A semiconductor device according to the present disclosure includes a first transistor and a second transistor disposed over the first transistor. The first transistor includes a plurality of channel members vertically stacked over one another, and a first source/drain feature adjoining the plurality of channel members. The second transistor includes a fin structure, and a second source/drain feature adjoining the fin structure. The semiconductor device further includes a conductive feature electrically connecting the first source/drain feature and the second source/drain feature.