METHOD OF FABRICATING A FINFET DEVICE

METHOD OF FABRICATING A FINFET DEVICE

In an embodiment, a device includes a first active region over a substrate, a portion of the first active region having a first surface, the first surface defining a channel and being a first distance from the substrate. A dummy structure is adjacent to the first active region and has a sidewall ext...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Ting, Kuo-Chiang, Chen, Kuang-Hsin, Wu, Chi-Hsi, Yin, Joanna Chaw Yane
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:In an embodiment, a device includes a first active region over a substrate, a portion of the first active region having a first surface, the first surface defining a channel and being a first distance from the substrate. A dummy structure is adjacent to the first active region and has a sidewall extending from the substrate to a second surface facing way from the substrate, the second surface being a second distance, less than the first distance, from the substrate. An isolation region extends from a sidewall of a lower portion of the first active region over the second surface of the dummy semiconductor structure.