METHODS FOR FORMING SELF-ALIGNED INTERCONNECT STRUCTURES

METHODS FOR FORMING SELF-ALIGNED INTERCONNECT STRUCTURES

The present disclosure provides a semiconductor structure. The semiconductor structure includes a substrate, a first conductive feature positioned in a top portion of the substrate, a dielectric layer over the substrate, and a second conductive feature surrounded by the dielectric layer and in conta...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Chang, Shih-Ming, Liu, Ru-Gun, Ng, Hoi-Tou
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:The present disclosure provides a semiconductor structure. The semiconductor structure includes a substrate, a first conductive feature positioned in a top portion of the substrate, a dielectric layer over the substrate, and a second conductive feature surrounded by the dielectric layer and in contact with the first conductive feature. The first conductive feature includes a metal layer and a reflective layer on the metal layer. The metal layer and the reflective layer have a same width. The reflective layer has a reflectivity higher than the metal layer.