CONTACT AND VIA STRUCTURES

An exemplary semiconductor device includes a substrate, a first conductive feature, a second conductive feature, and a third conductive feature over the substrate. The first conductive feature has a first top surface and a side surface. The third conductive feature is on the first top surface of the...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Chen, Jyh-Huei, Tsai, Kuo-Chiang
Format: Patent
Sprache:eng
Schlagworte:
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Beschreibung
Zusammenfassung:An exemplary semiconductor device includes a substrate, a first conductive feature, a second conductive feature, and a third conductive feature over the substrate. The first conductive feature has a first top surface and a side surface. The third conductive feature is on the first top surface of the first conductive feature and is spaced away from the second conductive feature. The third conductive feature has a first sidewall and a second sidewall opposing the first sidewall. The first sidewall extends between the first conductive feature and the second conductive feature. At least a segment of the first sidewall has a first slope. The second sidewall has a second slope. The second slope is greater than the first slope.