INTEGRATED CIRCUIT INTERCONNECT STRUCTURES WITH AIR GAPS

Examples of an integrated circuit with an interconnect structure and a method for forming the integrated circuit are provided herein. In some examples, the method includes receiving a workpiece having an interconnect structure that includes a first conductive feature, a second conductive feature dis...

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Bibliographische Detailangaben
Hauptverfasser: Chen, Hsin-Ping, Su, Li-Lin, Yang, Tai-I, Wu, Yung-Hsu, Chuang, Cheng-Chi
Format: Patent
Sprache:eng
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Zusammenfassung:Examples of an integrated circuit with an interconnect structure and a method for forming the integrated circuit are provided herein. In some examples, the method includes receiving a workpiece having an interconnect structure that includes a first conductive feature, a second conductive feature disposed beside the first conductive feature, and an inter-level dielectric disposed between the first conductive feature and the second conductive feature. A conductive material of an etch stop layer is selectively deposited on the first conductive feature and on the second conductive feature without depositing the conductive material on the inter-level dielectric, and the inter-level dielectric is removed to form a gap between the first conductive feature and the second conductive feature.