TiN ETCHANT COMPOSITION AND METHOD OF FORMING SEMICONDUCTOR DEVICE

A titanium nitride etchant composition and a method of forming a semiconductor device using the same are provided. The titanium nitride etchant composition includes hydrogen peroxide, phosphoric acid, and an amine compound, wherein the amine compound includes two or more nitrogen atoms.

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Bibliographische Detailangaben
Hauptverfasser:	SUNG, Minjae, LEE, JUN-EUN, KWON, TAE SOO, OH, JUNG-MIN, BAE, SANG WON, YOO, YOUN SUG, SONG, GAYOUNG, CHANG, WOOK
Format:	Patent
Sprache:	eng
Schlagworte:	ADHESIVES BASIC ELECTRIC ELEMENTS CHEMISTRY DYES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS NATURAL RESINS PAINTS POLISHES SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	A titanium nitride etchant composition and a method of forming a semiconductor device using the same are provided. The titanium nitride etchant composition includes hydrogen peroxide, phosphoric acid, and an amine compound, wherein the amine compound includes two or more nitrogen atoms.