NONVOLATILE MEMORY WITH UV-OPAQUE STRUCTURAL ARRANGEMENT ASSOCIATED WITH A STORAGE CELL

An integrated circuit comprises a transistor extending into a semiconductor substrate and having a gate structure having major and minor axes parallel to a surface of the semiconductor substrate, and a UV-opaque sheet structure vertically spaced apart from a top surface of the gate structure by a first distance and including an opening, the opening having first and second sides about parallel to the major axis, at least one of the first and second sides laterally spaced apart from a corresponding side of the gate structure by a second distance that is less than or equal to the first distance.