ROUTABILITY IMPROVEMENT FOR AN ULTRA-HIGH DENSE STANDARD CELL ARCHITECTURE
An IC includes a first cell including a first cell net unconnected within the first cell. The IC also includes at least one cell adjacent the first cell. The at least one cell includes a first interconnect unconnected to any nets within the at least one cell. The first cell net is connected together...
Gespeichert in:
Hauptverfasser: | , , |
---|---|
Format: | Patent |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | An IC includes a first cell including a first cell net unconnected within the first cell. The IC also includes at least one cell adjacent the first cell. The at least one cell includes a first interconnect unconnected to any nets within the at least one cell. The first cell net is connected together through the first interconnect. The first cell net may be on at least one of a first metal layer, a second metal layer, or a third metal layer. The first cell and the at least one cell may be adjacent to each other in a first direction. The first interconnect may extend in a second direction orthogonal to the first direction. The IC may further include second and third interconnects extending in the first direction between first and second parts, respectively, of the first cell net and the first interconnect. |
---|