RRAM CIRCUIT AND METHOD

A memory circuit includes a bias voltage generator including a first node, a current source coupled between a first power supply node and the first node, and a first transistor and a first resistive device coupled in series between the first node and a power reference node. A drive circuit includes...

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Bibliographische Detailangaben
Hauptverfasser: CHOU, Chung-Cheng, TSENG, Pei-Ling, LAI, Chien-An, LIN, Zheng-Jun, CHEN, Hsu-Shun
Format: Patent
Sprache:eng
Schlagworte:
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Beschreibung
Zusammenfassung:A memory circuit includes a bias voltage generator including a first node, a current source coupled between a first power supply node and the first node, and a first transistor and a first resistive device coupled in series between the first node and a power reference node. A drive circuit includes a second node, an amplifier including a first input terminal coupled to the first node and a second input terminal coupled to the second node, and a second transistor coupled between a second power supply node and the second node and including a gate coupled to an output terminal of the amplifier, and a resistive random-access memory (RRAM) device is coupled between the second node and the power reference node.