SEMICONDUCTOR MEMORY DEVICE

A memory device includes a stacked body including electrode layers and insulating layers; columnar bodies extending through the stacked body; and a contact coupled to a first electrode layer and passing through one or more second electrode layers, the first electrode layer including a first surface and a second surface, the first surface disposed farther away from the second electrode layers than the second surface. The contact includes a first insulating film, a second insulating film, and a metal film. A first end portion of the first insulating film protrudes into the first electrode layer through the second surface. A second end portion of the second insulating film is in contact with a portion of the second surface. A distance t1 between the first end portion and the first surface is shorter than a distance t2 between the second end portion and the first surface.