INTEGRATED CIRCUIT DEVICE

An integrated circuit device includes fin-type active regions extending in a first lateral direction on a substrate, a device isolation film covering sidewalls of the fin-type active regions, a gate line on the fin-type active regions and the device isolation film, nanosheet stacks on a fin top surface of each of the fin-type active regions, each nanosheet stack including at least one nanosheet and being surrounded by the gate line, a gate cut insulating portion on the device isolation film and facing an end sidewall of the gate line in a second lateral direction, and a corner insulating spacer between a first nanosheet stack of the nanosheet stacks and the gate cut insulating portion and between the device isolation film and the gate line, the first nanosheet stack being closest to the gate cut insulating portion in the second lateral direction.