SEMICONDUCTOR DEVICE

A semiconductor device includes a substrate, an active pattern including a lower pattern extending in a first direction and a plurality of sheet patterns above an upper surface of the lower pattern and spaced apart from the lower pattern in a second direction substantially perpendicular to the first direction, a gate structure on the lower pattern and including a gate electrode and a gate insulating film, the gate electrode and the gate insulating film at least partially surrounding the plurality of sheet patterns, a first gate capping pattern on the gate structure and above the plurality of sheet patterns in the second direction, a gate spacer extending along a side wall of the gate structure, and a second gate capping pattern extending along an upper surface of the gate structure and an upper surface of the first gate capping pattern.