INTEGRATED CIRCUIT DEVICES

An integrated circuit device may include a fin-type active region that protrudes from a substrate and extends in a first direction, a plurality of semiconductor patterns on the fin-type active region and separated from each other in a vertical direction, a gate line on the fin-type active region, the gate line surrounding the semiconductor patterns and extending in a second direction that intersects the first direction, a source/drain region on the fin-type active region, adjacent to the gate line and connected to the semiconductor patterns, wherein the source/drain region includes a first semiconductor layer contacting the semiconductor patterns and including a semiconductor material including a first element including at least one selected from the group consisting of fluorine, oxygen, argon, and nitrogen, and an inner spacer between the source/drain region and the gate line and including an oxide including the first element or a nitride including the first element.