IMPROVED BONDING STRUCTURES FOR SEMICONDUCTOR DEVICES AND METHODS OF FORMING THE SAME
An embodiment method of forming a hybrid bond between a first semiconductor device component and a second semiconductor device component may include forming the first semiconductor device component including a first electrical bonding structure formed within a first dielectric material; forming the...
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Zusammenfassung: | An embodiment method of forming a hybrid bond between a first semiconductor device component and a second semiconductor device component may include forming the first semiconductor device component including a first electrical bonding structure formed within a first dielectric material; forming the second semiconductor device component including a second electrical bonding structure formed within a second dielectric material; placing the first semiconductor device component and the second semiconductor device component together such that the first electrical bonding structure is in contact with the second electrical bonding structure; performing a first annealing process that forms a direct metal-to-metal bond between the first electrical bonding structure and the second electrical bonding structure; and performing a second annealing process that forms a direct dielectric-to-dielectric bond between the first dielectric material and the second dielectric material. |
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