BUTTED CONTACTS AND METHODS OF FABRICATING THE SAME IN SEMICONDUCTOR DEVICES

BUTTED CONTACTS AND METHODS OF FABRICATING THE SAME IN SEMICONDUCTOR DEVICES

A semiconductor structure includes a metal gate structure, a first gate spacer disposed on a first side of the metal gate structure, a source/drain feature disposed adjacent to the first gate spacer, a dielectric structure disposed over the source/drain feature, the first gate spacer, and the metal...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Lin, Yu-Ming, You, Jia-Chuan, Wang, Chih-Hao, Lin, Tien-Lu, Chang, Chia-Hao
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A semiconductor structure includes a metal gate structure, a first gate spacer disposed on a first side of the metal gate structure, a source/drain feature disposed adjacent to the first gate spacer, a dielectric structure disposed over the source/drain feature, the first gate spacer, and the metal gate structure, and a contact feature disposed in the dielectric structure and electrically connected to the metal gate structure and the source/drain feature. The first gate spacer is between the source/drain feature and the metal gate structure. The contact feature straddles over the first gate spacer and has a tilted sidewall intersecting with the metal gate structure.