HEAT DISSIPATION STRUCTURE AND SEMICONDUCTOR PACKAGE INCLUDING THE SAME

Provided is a semiconductor package including a substrate, a first semiconductor device on the substrate, and a heat dissipation structure on the first semiconductor device including a heat dissipation chamber configured to provide an internal space in which a working fluid moves, and a plurality of first isolation walls arranged in the heat dissipation chamber to define a first center channel and a plurality of first vapor channels communicating with each other via the first center channel, wherein each of the plurality of first isolation walls vertically overlaps the first semiconductor device, the first center channel vertically overlaps the first semiconductor device, and each of the plurality of first vapor channels extends from the first center channel in a lateral direction.