METHODS OF FORMING A SEMICONDUCTOR STRUCTURE

METHODS OF FORMING A SEMICONDUCTOR STRUCTURE

Methods for forming a semiconductor structure are disclosed. The methods include forming a bilayer hardmask by depositing a first hardmask layer and a second hardmask layer over a substrate including a first region and a second region. Exemplary structures formed can include CMOS device structures.

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Bibliographische Detailangaben
Hauptverfasser: Schmotzer, Michael, Winkler, Jereld Lee, Balseanu, Mihaela, Choudhury, Devika, Mullapudi, Kamesh
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:Methods for forming a semiconductor structure are disclosed. The methods include forming a bilayer hardmask by depositing a first hardmask layer and a second hardmask layer over a substrate including a first region and a second region. Exemplary structures formed can include CMOS device structures.