ETCHING COMPOSITION, METAL-CONTAINING FILM ETCHING METHOD USING THE SAME AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD USING THE SAME

An etching composition may include an oxidizer, an ammonium salt, an aqueous solvent, and an accelerator. A method of etching a metal-containing film may be performed using the etching composition, and a method of manufacturing a semiconductor device may be performed using the etching composition.

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Bibliographische Detailangaben
Hauptverfasser:	OH, Jungmin, KIM, Sungmin, KIM, Daihyun, PARK, Mihyun, HWANG, Kyuyoung, HAM, Cheol, KANG, Byungjoon
Format:	Patent
Sprache:	eng
Schlagworte:	ADHESIVES BASIC ELECTRIC ELEMENTS CHEMISTRY DYES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS NATURAL RESINS PAINTS POLISHES SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	An etching composition may include an oxidizer, an ammonium salt, an aqueous solvent, and an accelerator. A method of etching a metal-containing film may be performed using the etching composition, and a method of manufacturing a semiconductor device may be performed using the etching composition.