SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

A method for fabricating a semiconductor device includes forming a lower electrode layer containing carbon by applying AC power; forming a memory layer over the lower electrode layer; and forming an upper electrode layer containing carbon over the memory layer without applying AC power.

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Bibliographische Detailangaben
1. Verfasser: SUNG, Yong Hun
Format: Patent
Sprache:eng
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Zusammenfassung:A method for fabricating a semiconductor device includes forming a lower electrode layer containing carbon by applying AC power; forming a memory layer over the lower electrode layer; and forming an upper electrode layer containing carbon over the memory layer without applying AC power.