MAGNETIC TUNNEL JUNCTION (MTJ) ELEMENT AND ITS FABRICATION PROCESS

MAGNETIC TUNNEL JUNCTION (MTJ) ELEMENT AND ITS FABRICATION PROCESS

A magnetic tunnel junction (MTJ) element is provided. The MTJ element includes a buffer layer, a seed layer disposed over the buffer layer, a first ferromagnetic layer disposed over the seed layer, a tunnel barrier layer disposed over the first ferromagnetic layer and a second ferromagnetic layer di...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: LIN, TSANN, LEE, YA-LING
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRICITY
INDUCTANCES
MAGNETS
SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
TRANSFORMERS
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Beschreibung
Zusammenfassung:A magnetic tunnel junction (MTJ) element is provided. The MTJ element includes a buffer layer, a seed layer disposed over the buffer layer, a first ferromagnetic layer disposed over the seed layer, a tunnel barrier layer disposed over the first ferromagnetic layer and a second ferromagnetic layer disposed over the tunnel barrier layer. The seed layer includes a Cobalt (Co)-based film. The buffer layer includes cobalt (Co) and hafnium (Hf). The buffer layer is alloyed with chromium and has chromium content up to 20 at. %. The MTJ element in accordance with the present disclosure exhibits a low resistance desired for a low-power write operation, and a high TMR coefficient desired for a low bit-error-rate (BER) read operation.