MAGNETIC MEMORY DEVICE, AND MANUFACTURING METHOD OF MAGNETIC MEMORY DEVICE

MAGNETIC MEMORY DEVICE, AND MANUFACTURING METHOD OF MAGNETIC MEMORY DEVICE

According to one embodiment, a magnetic memory device includes a switching element; a magnetoresistive effect element; and an electrode provided between the switching element and the magnetoresistive effect element, wherein the electrode includes a first sub-electrode in contact with the switching e...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: YOSHINO, Kenichi, CHO, Hyungjun, AKIYAMA, Naoki, SAWADA, Kazuya, SHIMANO, Takuya
Format: Patent
Sprache:eng
Schlagworte:
ELECTRICITY
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Beschreibung
Zusammenfassung:According to one embodiment, a magnetic memory device includes a switching element; a magnetoresistive effect element; and an electrode provided between the switching element and the magnetoresistive effect element, wherein the electrode includes a first sub-electrode in contact with the switching element, a second sub-electrode in contact with the magnetoresistive effect element, and a third sub-electrode provided between the first sub-electrode and the second sub-electrode, wherein the first sub-electrode and the second sub-electrode includes at least one of C and CN, and wherein the third sub-electrode includes at least one of a high melting point metal element and a compound of the high melting point metal element.