METAL STACK WITH PHONON SCATTERING LAYER THAT FORMS A NON-OHMIC CONTACT TO A SEMICONDUCTOR LAYER

A transistor device includes a semiconductor body and a non-ohmic contact on the semiconductor body. The non-ohmic contact includes a phonon scattering layer on the semiconductor body, a protection layer on a surface of the phonon scattering layer opposite the semiconductor body, and a contact layer...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Jones, Evan, Etter, Daniel, Bothe, Kyle
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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