METAL STACK WITH PHONON SCATTERING LAYER THAT FORMS A NON-OHMIC CONTACT TO A SEMICONDUCTOR LAYER

METAL STACK WITH PHONON SCATTERING LAYER THAT FORMS A NON-OHMIC CONTACT TO A SEMICONDUCTOR LAYER

A transistor device includes a semiconductor body and a non-ohmic contact on the semiconductor body. The non-ohmic contact includes a phonon scattering layer on the semiconductor body, a protection layer on a surface of the phonon scattering layer opposite the semiconductor body, and a contact layer...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Jones, Evan, Etter, Daniel, Bothe, Kyle
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A transistor device includes a semiconductor body and a non-ohmic contact on the semiconductor body. The non-ohmic contact includes a phonon scattering layer on the semiconductor body, a protection layer on a surface of the phonon scattering layer opposite the semiconductor body, and a contact layer on a surface of the protection layer opposite the phonon scattering layer. The phonon scattering layer has a work function in a range of about 4.5 eV to about 5.7 eV and a melting point in a range of about 1550° C. to about 3200° C.