INTEGRATED SEMICONDUCTOR STRUCTURE AND METHOD FOR MAKING THE SAME

An integrated semiconductor structure includes a silicon substrate, a silicon-based semiconductor device, and a nitride-based semiconductor device. The silicon substrate has a first area and a second area. The first area is formed with a trench that has a trench surface with a (111) orientation. The second area has an area surface with a (100) orientation. The silicon-based semiconductor device is disposed on the area surface with the (100) orientation. The nitride-based semiconductor device is disposed on the trench surface with the (111) orientation. A method for making the integrated semiconductor structure includes: a) providing a silicon substrate having first and second areas each having an area surface; b) forming a silicon-based semiconductor device on the area surface of the second area; c) wet etching the first area to form a trench having a trench surface; and d) forming a nitride-based semiconductor device on the trench surface.