HIGH ELECTRON MOBILITY TRANSISTOR AND HIGH ELECTRON MOBILITY TRANSISTOR FORMING METHOD

A high electron mobility transistor (HEMT) and method for forming the same are disclosed. The method includes the following steps: forming a channel layer on a substrate; forming a barrier layer on the channel layer; defining a gate structure on the barrier layer; defining a source ohmic contact recess and a drain ohmic contact recess, wherein each of the source ohmic contact recess and the drain ohmic contact recess has a sidewall portion and a bottom portion; depositing an un-doped layer covering the channel layer, the barrier layer, the gate structure, the source ohmic contact recess and the drain ohmic contact recess such that the electron transporting area is rebuilt at the interface around the bottom portion and the sidewall portion of the source ohmic contact recess and the drain ohmic contact recess.