SEMICONDUCTOR STRUCTURE AND METHOD OF FABRICATING SAME

SEMICONDUCTOR STRUCTURE AND METHOD OF FABRICATING SAME

A method of fabricating a semiconductor device that includes a first die component and at least one second die component. The first die component includes a substrate, a dielectric layer on the substrate, and one or more metal pads positioned on the dielectric layer. The first die component further...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Chuang, Yao-Chun, Huang, Li-Hsien, Li, SyuFong, Chen, Wei-Hao, Lu, Yinlung
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A method of fabricating a semiconductor device that includes a first die component and at least one second die component. The first die component includes a substrate, a dielectric layer on the substrate, and one or more metal pads positioned on the dielectric layer. The first die component further includes a passivation/bond film layer that is formed over the one or more metal pads, and one or more bond pad vias that extend through the passivation/bond film layer and contact one or more metal pads. The at least one second die component is bonded to the first die component and includes a substrate, and one or more through silicon vias, with the one or more through silicon vias contacting the one or more bond pad vias.