MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME

A memory device includes a first bit line pad and a second bit line pad on a substrate and separated from each other in a first horizontal direction, a plurality of horizontal channel areas extending parallel in the first horizontal direction between the first bit line pad and the second bit line pad, and alternately connected to the first bit line pad and the second bit line pad at first end portions of the plurality of horizontal channel areas, a plurality of common source plugs connected to the second end portions of the plurality of horizontal channel areas opposite to the first end portions, and a plurality of gate plugs extending in a vertical direction and disposed between the plurality of horizontal channel areas, and respectively having end portions in a second horizontal direction perpendicular to the first horizontal direction in contact with the plurality of horizontal channel areas.