Vertical Power Semiconductor Device and Manufacturing Method Thereof

A vertical power semiconductor device includes a semiconductor material layer having a first surface and a second surface opposite each other. A first electrode structure and a second electrode structure are arranged in the semiconductor material layer, extending from the first surface to the second...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	CHUANG, Chiao-Shun, KUO, TaChuan
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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