Vertical Power Semiconductor Device and Manufacturing Method Thereof

A vertical power semiconductor device includes a semiconductor material layer having a first surface and a second surface opposite each other. A first electrode structure and a second electrode structure are arranged in the semiconductor material layer, extending from the first surface to the second surface. A first doped region having a first conductivity type is arranged between the first and second electrode structures. A second doped region having a second conductivity type is in the first doped region. The second doped region is close to the bottom of the first doped region and separated from the first surface. A third doped region having the second conductivity type is between the bottom of the first doped region and the second surface. A conductive plug is between the first and second electrode structures and separated from the third doped region. A method for manufacturing the semiconductor device is also provided.