SEMICONDUCTOR DEVICE, MATCHING CIRCUIT, AND FILTERING CIRCUIT

A semiconductor device that includes a substrate; a first electrode layer on the substrate; a dielectric film on the first electrode layer, the dielectric film containing silicon oxide, and a ratio of three-membered ring structures to four-membered ring structures in the silicon oxide is 0.46 or les...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
1. Verfasser: ITO, Korekiyo
Format: Patent
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:A semiconductor device that includes a substrate; a first electrode layer on the substrate; a dielectric film on the first electrode layer, the dielectric film containing silicon oxide, and a ratio of three-membered ring structures to four-membered ring structures in the silicon oxide is 0.46 or less; a second electrode layer on the dielectric film; a protective layer covering the first electrode layer and the second electrode layer, and outer electrodes piercing the protective layer.