PLASMA PROCESSING WITH INDEPENDENT TEMPERATURE CONTROL

PLASMA PROCESSING WITH INDEPENDENT TEMPERATURE CONTROL

Embodiments of the present disclosure generally relate to inductively coupled plasma sources and plasma processing apparatus. In at least one embodiment, a plasma processing method includes introducing a gas including helium and nitrogen into a gas injection channel of a plasma source. The method in...

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Hauptverfasser: NIYOGI, Sandip, VADLADI, Dileep Venkata Sai, HUANG, Lily, LIU, Wei
Format: Patent
Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator NIYOGI, Sandip
VADLADI, Dileep Venkata Sai
HUANG, Lily
LIU, Wei
description Embodiments of the present disclosure generally relate to inductively coupled plasma sources and plasma processing apparatus. In at least one embodiment, a plasma processing method includes introducing a gas including helium and nitrogen into a gas injection channel of a plasma source. The method includes generating a plasma within the gas injection channel. The plasma includes helium radicals and nitrogen radicals. The method includes delivering the plasma from the plasma source to a process chamber including a substrate. The method includes producing a treated substrate by processing the substrate with the plasma within the process chamber, in which processing the substrate includes contacting the plasma including the helium radicals and nitrogen radicals with a first side of the substrate.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title PLASMA PROCESSING WITH INDEPENDENT TEMPERATURE CONTROL
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