PLASMA PROCESSING WITH INDEPENDENT TEMPERATURE CONTROL

Embodiments of the present disclosure generally relate to inductively coupled plasma sources and plasma processing apparatus. In at least one embodiment, a plasma processing method includes introducing a gas including helium and nitrogen into a gas injection channel of a plasma source. The method includes generating a plasma within the gas injection channel. The plasma includes helium radicals and nitrogen radicals. The method includes delivering the plasma from the plasma source to a process chamber including a substrate. The method includes producing a treated substrate by processing the substrate with the plasma within the process chamber, in which processing the substrate includes contacting the plasma including the helium radicals and nitrogen radicals with a first side of the substrate.