THIN-FILM FORMING RAW MATERIAL, THIN-FILM AND METHOD OF PRODUCING THIN-FILM

Provided is a thin-film forming raw material, including an alkoxide compound represented by the following general formula (1):where R1 to R4 each independently represent an alkyl group having 1 to 5 carbon atoms, M represents a rare earth metal atom, and "n" represents a valence of the rar...

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Bibliographische Detailangaben
Hauptverfasser:	MITSUI, Chiaki, HATASE, Masako, YAMASHITA, Atsushi
Format:	Patent
Sprache:	eng
Schlagworte:	CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	Provided is a thin-film forming raw material, including an alkoxide compound represented by the following general formula (1):where R1 to R4 each independently represent an alkyl group having 1 to 5 carbon atoms, M represents a rare earth metal atom, and "n" represents a valence of the rare earth metal atom.