SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME
A semiconductor memory device includes a first stacked body that includes first insulating films and first conductive films alternately stacked in a first direction; first columnar bodies each including a first semiconductor structure extending through the first stacked body, the plurality of first...
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Zusammenfassung: | A semiconductor memory device includes a first stacked body that includes first insulating films and first conductive films alternately stacked in a first direction; first columnar bodies each including a first semiconductor structure extending through the first stacked body, the plurality of first columnar bodies being configured as memory cells; and a plurality of second columnar bodies that each include at least one conductor extending through the first stacked body in the first direction, and are each coupled to a corresponding one of the first conductive films and a stacked film including second, third, and fourth insulating films, wherein the second to fourth insulating films are provided between the at least one conductor and the first stacked body. |
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