SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME

A semiconductor memory device includes a first stacked body that includes first insulating films and first conductive films alternately stacked in a first direction; first columnar bodies each including a first semiconductor structure extending through the first stacked body, the plurality of first...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: SHOJI, Kazuki, IGUCHI, Tadashi
Format: Patent
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:A semiconductor memory device includes a first stacked body that includes first insulating films and first conductive films alternately stacked in a first direction; first columnar bodies each including a first semiconductor structure extending through the first stacked body, the plurality of first columnar bodies being configured as memory cells; and a plurality of second columnar bodies that each include at least one conductor extending through the first stacked body in the first direction, and are each coupled to a corresponding one of the first conductive films and a stacked film including second, third, and fourth insulating films, wherein the second to fourth insulating films are provided between the at least one conductor and the first stacked body.