SEMICONDUCTOR DIE AND METHOD OF MANUFACTURING THE SAME

SEMICONDUCTOR DIE AND METHOD OF MANUFACTURING THE SAME

The disclosure relates to a semiconductor die that includes a vertical transistor device having a gate electrode in a gate trench, and a MOS gated diode (MGD) having an MGD gate electrode in an MGD trench. The gate trench of the vertical transistor device has an elongated extension in a first latera...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Wutte, Britta, Marak, Arnold, Feil, Thomas Martin
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator Wutte, Britta
Marak, Arnold
Feil, Thomas Martin
description The disclosure relates to a semiconductor die that includes a vertical transistor device having a gate electrode in a gate trench, and a MOS gated diode (MGD) having an MGD gate electrode in an MGD trench. The gate trench of the vertical transistor device has an elongated extension in a first lateral direction. The vertical transistor device and the MGD are arranged consecutively in the first lateral direction.
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2024290877A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2024290877A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2024290877A13</originalsourceid><addsrcrecordid>eNrjZDALdvX1dPb3cwl1DvEPUnDxdFVw9HNR8HUN8fB3UfB3U_B19At1c3QOCQ3y9HNXCPFwVQh29HXlYWBNS8wpTuWF0twMym6uIc4euqkF-fGpxQWJyal5qSXxocFGBkYmRpYGFubmjobGxKkCAKDGKLg</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>SEMICONDUCTOR DIE AND METHOD OF MANUFACTURING THE SAME</title><source>esp@cenet</source><creator>Wutte, Britta ; Marak, Arnold ; Feil, Thomas Martin</creator><creatorcontrib>Wutte, Britta ; Marak, Arnold ; Feil, Thomas Martin</creatorcontrib><description>The disclosure relates to a semiconductor die that includes a vertical transistor device having a gate electrode in a gate trench, and a MOS gated diode (MGD) having an MGD gate electrode in an MGD trench. The gate trench of the vertical transistor device has an elongated extension in a first lateral direction. The vertical transistor device and the MGD are arranged consecutively in the first lateral direction.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2024</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20240829&amp;DB=EPODOC&amp;CC=US&amp;NR=2024290877A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25544,76293</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20240829&amp;DB=EPODOC&amp;CC=US&amp;NR=2024290877A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Wutte, Britta</creatorcontrib><creatorcontrib>Marak, Arnold</creatorcontrib><creatorcontrib>Feil, Thomas Martin</creatorcontrib><title>SEMICONDUCTOR DIE AND METHOD OF MANUFACTURING THE SAME</title><description>The disclosure relates to a semiconductor die that includes a vertical transistor device having a gate electrode in a gate trench, and a MOS gated diode (MGD) having an MGD gate electrode in an MGD trench. The gate trench of the vertical transistor device has an elongated extension in a first lateral direction. The vertical transistor device and the MGD are arranged consecutively in the first lateral direction.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2024</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDALdvX1dPb3cwl1DvEPUnDxdFVw9HNR8HUN8fB3UfB3U_B19At1c3QOCQ3y9HNXCPFwVQh29HXlYWBNS8wpTuWF0twMym6uIc4euqkF-fGpxQWJyal5qSXxocFGBkYmRpYGFubmjobGxKkCAKDGKLg</recordid><startdate>20240829</startdate><enddate>20240829</enddate><creator>Wutte, Britta</creator><creator>Marak, Arnold</creator><creator>Feil, Thomas Martin</creator><scope>EVB</scope></search><sort><creationdate>20240829</creationdate><title>SEMICONDUCTOR DIE AND METHOD OF MANUFACTURING THE SAME</title><author>Wutte, Britta ; Marak, Arnold ; Feil, Thomas Martin</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2024290877A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2024</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>Wutte, Britta</creatorcontrib><creatorcontrib>Marak, Arnold</creatorcontrib><creatorcontrib>Feil, Thomas Martin</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Wutte, Britta</au><au>Marak, Arnold</au><au>Feil, Thomas Martin</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SEMICONDUCTOR DIE AND METHOD OF MANUFACTURING THE SAME</title><date>2024-08-29</date><risdate>2024</risdate><abstract>The disclosure relates to a semiconductor die that includes a vertical transistor device having a gate electrode in a gate trench, and a MOS gated diode (MGD) having an MGD gate electrode in an MGD trench. The gate trench of the vertical transistor device has an elongated extension in a first lateral direction. The vertical transistor device and the MGD are arranged consecutively in the first lateral direction.</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng
recordid cdi_epo_espacenet_US2024290877A1
source esp@cenet
subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title SEMICONDUCTOR DIE AND METHOD OF MANUFACTURING THE SAME
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-27T20%3A20%3A49IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Wutte,%20Britta&rft.date=2024-08-29&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS2024290877A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true