SEMICONDUCTOR DIE AND METHOD OF MANUFACTURING THE SAME

SEMICONDUCTOR DIE AND METHOD OF MANUFACTURING THE SAME

The disclosure relates to a semiconductor die that includes a vertical transistor device having a gate electrode in a gate trench, and a MOS gated diode (MGD) having an MGD gate electrode in an MGD trench. The gate trench of the vertical transistor device has an elongated extension in a first latera...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Wutte, Britta, Marak, Arnold, Feil, Thomas Martin
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:The disclosure relates to a semiconductor die that includes a vertical transistor device having a gate electrode in a gate trench, and a MOS gated diode (MGD) having an MGD gate electrode in an MGD trench. The gate trench of the vertical transistor device has an elongated extension in a first lateral direction. The vertical transistor device and the MGD are arranged consecutively in the first lateral direction.