SEMICONDUCTOR DEVICE
A semiconductor device includes a semiconductor layer including an element region, and a termination region; a first electrode; a second electrode; a semi-insulating film located on the termination region; an insulating film located between the semiconductor layer and the semi-insulating film; and a...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | A semiconductor device includes a semiconductor layer including an element region, and a termination region; a first electrode; a second electrode; a semi-insulating film located on the termination region; an insulating film located between the semiconductor layer and the semi-insulating film; and a protective film located on the semi-insulating film. The insulating film includes an inner perimeter portion, the inner perimeter portion being located between an end portion of the first electrode positioned at the termination region side and an end portion of the second semiconductor part positioned at the termination region side, an outer perimeter portion located between the second electrode and the semiconductor layer, and an intermediate portion located between the inner perimeter portion and the outer perimeter portion. A thickness of the intermediate portion is less than a thickness of the inner perimeter portion and a thickness of the outer perimeter portion. |
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