SEMICONDUCTOR DEVICE
A semiconductor device includes, as each of a first electrostatic protection diode, a second electrostatic protection diode, and a third electrostatic protection diode, a lateral NDMOS transistor thyristorized by having a p-type dopant region formed in its drain. For example, the anode of the first...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | A semiconductor device includes, as each of a first electrostatic protection diode, a second electrostatic protection diode, and a third electrostatic protection diode, a lateral NDMOS transistor thyristorized by having a p-type dopant region formed in its drain. For example, the anode of the first electrostatic protection diode is connected to a first signal terminal; the anode of the second electrostatic protection diode is connected to a second signal terminal; and the anode of the third electrostatic protection diode is connected to a ground terminal. The cathodes of the first, second, and third electrostatic protection diodes are connected together. |
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