SEMICONDUCTOR DEVICE INCLUDING BSPDN STRUCTURES IN SMALL-CPP AREA AND LARGE-CPP AREA

SEMICONDUCTOR DEVICE INCLUDING BSPDN STRUCTURES IN SMALL-CPP AREA AND LARGE-CPP AREA

Provided is a semiconductor device in which a large-CPP area includes a 1st source/drain structure; a 1st frontside contact structure, at a front side of the semiconductor device, connected to the 1st source/drain structure; a 1st via structure, at a lateral side of the 1st source/drain structure, c...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: PARK, Panjae, SEO, Kang-ill
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:Provided is a semiconductor device in which a large-CPP area includes a 1st source/drain structure; a 1st frontside contact structure, at a front side of the semiconductor device, connected to the 1st source/drain structure; a 1st via structure, at a lateral side of the 1st source/drain structure, connected to the 1st frontside contact structure; a 2nd via structure on the 1st frontside via structure; a 1st frontside metal line, at the front side of the semiconductor device, connected to the 2nd via structure; and a 1st backside metal line, at a back side of the semiconductor device, connected to the 1st via structure.