SEMICONDUCTOR PHOTORESIST COMPOSITION AND METHOD OF FORMING PATTERNS USING THE COMPOSITION

A semiconductor photoresist composition and a method of forming patterns, the composition includes an acid reactive polymer; a resin additive including a block copolymer; a photo acid generator; a photo-decomposable quencher; and a solvent, wherein the block copolymer includes an A-block and a B-blo...

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Bibliographische Detailangaben
Hauptverfasser:	PARK, Ji cheol, AHN, Seonghyeon, IM, Honggu
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	A semiconductor photoresist composition and a method of forming patterns, the composition includes an acid reactive polymer; a resin additive including a block copolymer; a photo acid generator; a photo-decomposable quencher; and a solvent, wherein the block copolymer includes an A-block and a B-block, a water contact angle of a polymer film consisting of the A-block is greater than about 50° and less than or equal to about 100°, and a water contact angle of a polymer film consisting of the B-block is greater than about 0° and less than or equal to about 50°.