PHOTOLITHOGRAPHY MASK GENERATION FOR METALENS

PHOTOLITHOGRAPHY MASK GENERATION FOR METALENS

In an example, a target design of a metalens is obtained. The target design includes target design meta-atoms. A mask design is generated, by one or more processors, based on area deviations of to-be-fabricated meta-atoms of the metalens relative to the target design meta-atoms. The mask design may...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Klostermann, Ulrich Karl, Melvin, III, Lawrence S, Kuechler, Bernd, Zimmermann, Rainer, Stoffer, Remco, Chalony, Maryvonne
Format: Patent
Sprache:eng
Schlagworte:
OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
OPTICS
PHYSICS
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Beschreibung
Zusammenfassung:In an example, a target design of a metalens is obtained. The target design includes target design meta-atoms. A mask design is generated, by one or more processors, based on area deviations of to-be-fabricated meta-atoms of the metalens relative to the target design meta-atoms. The mask design may be generated using a rule-based correction, such as using a look-up table (LUT), in some examples, and may be generated using a model-based correction in some examples.