SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

A semiconductor device according to the present embodiment includes a first semiconductor chip and a second semiconductor chip. The first semiconductor chip has a first upper surface on which a first electrode pad is formed. The second semiconductor chip has a first lower surface on which a second electrode pad directly joined to the first electrode pad is formed and a second upper surface that is opposite the first lower surface and on which a third electrode pad is formed. The area of the first lower surface is smaller than the area of the first upper surface. The barycenter of the first lower surface and the barycenter of the first upper surface are located at different positions in the in-plane direction of the first upper surface.