SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

A semiconductor device includes electrode layers and first insulating films alternately stacked on top of one another; a second insulating film extending along an upper surface, a lower surface, and a side surface of one of electrode layers; a charge storage layer extending along a side surface of t...

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Bibliographische Detailangaben
Hauptverfasser: NOGUCHI, Masaki, UMEDA, Chihiro, IINO, Tomohisa, NAKAJIMA, Yusuke, KAMIYA, Yuta, TAKASHIMA, Akira
Format: Patent
Sprache:eng
Schlagworte:
ELECTRICITY
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Beschreibung
Zusammenfassung:A semiconductor device includes electrode layers and first insulating films alternately stacked on top of one another; a second insulating film extending along an upper surface, a lower surface, and a side surface of one of electrode layers; a charge storage layer extending along a side surface of the second insulating film with a third insulating film interposed therebetween; and a semiconductor layer extending along a side surface of the charge storage layer with a fourth insulating film interposed therebetween. A hydrogen concentration in the fourth insulating film is equal to or higher than a hydrogen concentration in the charge storage layer, which is equal to or higher than a hydrogen concentration in the third insulating film, which is equal to or higher than a hydrogen concentration in the second insulating film.