SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

A semiconductor device includes a gate structure including conductive layers and insulating layers that are alternately stacked. The semiconductor device also includes an insulating core located in the gate structure and including a long axis and a short axis. The semiconductor device further includ...

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Bibliographische Detailangaben
Hauptverfasser: CHOI, Won Geun, JANG, Jung Shik, KWAK, Rho Gyu, CHOI, Jung Dal, PARK, In Su
Format: Patent
Sprache:eng
Schlagworte:
ELECTRICITY
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Beschreibung
Zusammenfassung:A semiconductor device includes a gate structure including conductive layers and insulating layers that are alternately stacked. The semiconductor device also includes an insulating core located in the gate structure and including a long axis and a short axis. The semiconductor device further includes a first channel pattern and a second channel pattern surrounding the insulating core and located to face each other along the long axis. The semiconductor device additionally includes a barrier pattern surrounding the first channel pattern and the second channel pattern and having different thicknesses along the long axis and the short axis.