PLANAR INP-BASED SINGLE PHOTON AVALANCHE DIODE AND USE THEREOF

The present disclosure provides a planar InP-based single photon avalanche diode and use thereof, the isolation ring of the planar InP-based SPAD can effectively prevent the tunneling effect and reduce the dark count rate, thereby improving the device performance of the InP-based SPAD, shortening the period of the avalanche process, reducing the dark current, and enhancing quantum efficiency, as well as increasing the response frequency. Compared to traditional Si-based CMOS devices, InP material has an anti-radiation characteristic, making it more suitable for applications in the fields of aerospace communication and nuclear power. In addition, a planar electrode structure facilitates the formation of the contact layer and subsequent packaging, as well as integration with other devices or microcircuits.