GAN DEVICE WITH N2 PRE-TREATMENT AND METHOD OF PERFORMING N2 PRE-TREATMENT

GAN DEVICE WITH N2 PRE-TREATMENT AND METHOD OF PERFORMING N2 PRE-TREATMENT

A GaN device with N2 pre-treatment is provided in the present invention, including a GaN substrate, an AlGaN layer covering the GaN substrate, a p-GaN gate on the AlGaN layer, a TiN electrode on the p-GaN gate, a first dielectric layer on the AlGaN layer surrounding the p-GaN gate, wherein a horizon...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Yeh, Po-Hsien, Chen, Hwi-Huang, Chen, Hsin-Hong, Huang, Yu-Jen, Chou, Jih-Wen
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A GaN device with N2 pre-treatment is provided in the present invention, including a GaN substrate, an AlGaN layer covering the GaN substrate, a p-GaN gate on the AlGaN layer, a TiN electrode on the p-GaN gate, a first dielectric layer on the AlGaN layer surrounding the p-GaN gate, wherein a horizontal spacing is between the first dielectric layer and the p-GaN gate, and an interface between the AlGaN layer and the GaN substrate not covered by the first dielectric layer is subject to N2 pre-treatment, and a second dielectric layer covering on and directly contacting the exposed first dielectric layer, AlGaN layer, p-GaN gate and TiN electrode.