SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

A semiconductor device may include a substrate, a lower power line buried in a lower portion of the substrate, a source/drain pattern on the substrate, an interlayer insulating layer on the source/drain pattern, and a back-side contact penetrating the substrate and electrically connecting the lower...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
1. Verfasser: YOO, Jongryeol
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:A semiconductor device may include a substrate, a lower power line buried in a lower portion of the substrate, a source/drain pattern on the substrate, an interlayer insulating layer on the source/drain pattern, and a back-side contact penetrating the substrate and electrically connecting the lower power line to the source/drain pattern. The back-side contact may penetrate the source/drain pattern and may include a first surface in contact with the interlayer insulating layer.