MANUFACTURING METHOD OF SEMICONDUCTOR STRUCTURE

The invention provides a manufacturing method of a semiconductor structure, which includes the following. A substrate is provided. The substrate includes a region of a first conductivity type. A patterned photoresist layer is formed on the substrate. The patterned photoresist layer includes a main p...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser:	Lee, Shih-Ping, Hsu, Mao-Teng, Peng, Kuo-Tung
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	The invention provides a manufacturing method of a semiconductor structure, which includes the following. A substrate is provided. The substrate includes a region of a first conductivity type. A patterned photoresist layer is formed on the substrate. The patterned photoresist layer includes a main portion and a split portion separated from each other. An ion implantation process is performed on the substrate by using the patterned photoresist layer as a mask to form a well region in the region of the first conductivity type. The well region has a second conductivity type. The main portion and the split portion are adjacent to the same end terminal of the well region.