RADICAL-ACTIVATED CARBON FILM DEPOSITION

Crystalline or amorphous carbon films are deposited on a substrate using radical-activated carbon-containing precursors. The carbon-containing precursors include one or more C-C bonds and/or one or more C-H bonds. Radicals are generated in a remote plasma source located upstream of a reaction chambe...

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Bibliographische Detailangaben
Hauptverfasser:	WEIMER, Matthew Scott, VARADARAJAN, Bhadri N
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	Crystalline or amorphous carbon films are deposited on a substrate using radical-activated carbon-containing precursors. The carbon-containing precursors include one or more C-C bonds and/or one or more C-H bonds. Radicals are generated in a remote plasma source located upstream of a reaction chamber, and carbon-containing precursors are flowed into the reaction chamber downstream from the remote plasma source. The radicals interact with the C-C bonds and/or C-H bonds to activate the carbon-containing precursors in an environment adjacent to the substrate. In some implementations, highly conformal amorphous carbon films are deposited by radical-activated carbon-containing precursors.