Semiconductor Device and Methods of Forming the Same

In an embodiment, a method includes forming a first semiconductor fin and a second semiconductor fin over a front-side of a substrate; etching a first recess in the first semiconductor fin and a second recess in the second semiconductor fin; forming a first epitaxial region in the first recess and first epitaxial nodules along sidewalls of the first recess; forming a second epitaxial region in the second recess and second epitaxial nodules along sidewalls of the second recess; flowing first precursors to remove the first epitaxial nodules; depositing an interlayer dielectric over the first epitaxial region and the second epitaxial region; etching a first opening in the interlayer dielectric to expose the first epitaxial region; forming a first epitaxial cap on the first epitaxial region and third epitaxial nodules over the interlayer dielectric; and flowing second precursors to remove the third epitaxial nodules.